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MID-IR LEDs

GaSb-InAs Light Emitting Diodes are designed for emitting at a spectral Range 1.6...4.6 um. They are fabricated from heterostructures (HS) grown by liquid-phase epitaxy (LPE). The output emission can be modulated by current flowing in a forward direction. Devices can be mounted in standard TO-18 package or in TO-5 package with thermocooler and thermistot inside and equipped with parabolic reflector to collimate output beam.

List of MID-IR LEDs in stock

 

 

 

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